CM1200DC-34N Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
R_th(j-c) Q
R_th(j-c) D
R_th(c-f)
IGBT Part, 1/2 Module
FWDi Part, 1/2 Module
λ_grease = 1W/m•K, 1/2 Module
Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Comparative Tracking Index
CTI
–
Clearance Distance in Air
Creepage Distance Along Surface
Internal Inductance
Internal Lead Resistance
d_a
d_s
L_C-E(int)
R_C-E(int)
–
–
IGBT Part
T_C = 25°C
Min.
Typ.
Max. Units
–
–
0.019 °C/W
–
–
0.042 °C/W
–
0.016
–
°C/W
Min.
Typ.
Max. Units
600
–
–
–
9.5
–
–
mm
15.0
–
–
mm
–
30
–
nH
–
0.28
–
mΩ
4
12/12 Rev. 2