CM1200DC-34N Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Operating Temperature
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_c = 75°C)
Peak Collector Current (Pulse)
Emitter Current (T_c = 25°C)*²
Emitter Surge Current (Pulse)*²
Maximum Power Dissipation (T_c = 25°C, IGBT Part)*³
Max. Mounting Torque M8 Main Terminal Screws
T_j
T_stg
T_opr
V_CES
V_GES
I_C
I_CM*¹
I_E
I_EM*¹
P_C
–
Max. Mounting Torque M6 Mounting Screws
–
Max. Mounting Torque M4 Auxiliary Terminal Screws
–
Module Weight (Typical)
–
Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.)
V_iso
Maximum Short Circuit Pulse Width
t_psc
(V_CC = 1200V, V_CES ≤ 1700V, V_GE = 15V, T_j = 125°C)
*1 Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_opr(max) rating (125°C).
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Junction temperature (T_j) should not exceed T_j(max) rating (150°C).
CM1200DC-34N
-40 to 150
-40 to 125
-40 to 125
1700
±20
1200
2400
1200
2400
6500
177
53
27
0.8
4000
10
Units
°C
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
kg
Volts
µs
2
12/12 Rev. 2