QJD1210010_14 Datasheet, PDF (5/7 Pages) Powerex Power Semiconductors – Split Dual SiC MOSFET Module 100 Amperes/1200 Volts

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QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Preliminary
TYPICAL OUTPUT CHARACTERISTICS
(T_j = 25ºC)
600
T_j = 25°C
500
V_GE = 20V
18
400
16
300
14
200
12
100
10
0
0
4
8 12 16 20
DRAIN-SOURCE VOLTAGE, V_DS, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
T_j = 25°C
T_j = 175°C
300
200
100
0
0
5
10
15
20
GATE SOURCE VOLTAGE, V_GS, (VOLTS)
TYPICAL OUTPUT CHARACTERISTICS
(T_j = 175ºC)
500
V_GE = 20V
18
400
16
14
300
12
200
10
100
0
0
4
8 12 16 20
DRAIN-SOURCE VOLTAGE, V_DS, (VOLTS)
NORMALIZED ON-RESISTANCE
VS. TEMPERATURE
2.0
V_GS = 20V
1.6
1.2
0.8
0.4
0
0
50
100
150
200
JUNCTION TEMPERATURE, T_j, (°C)
2/7/14 Rev. 4
5