QJD1210010_14 Datasheet, PDF (3/7 Pages) Powerex Power Semiconductors – Split Dual SiC MOSFET Module 100 Amperes/1200 Volts

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QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
MOSFET Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 50μA, VGS = 0
Zero Gate Voltage Drain Current**
IDSS
VGS = 0, VDS = 1200V
Zero Gate Voltage Drain Current**
IDSS
VGS = 0, VDS = 1200V, Tj = 175°C
Gate Leakage Current
IGSS
VDS = 0, VGS = 20V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 10mA
VDS = VGS, ID = 10mA, Tj = 175°C
Drain-Source On Resistance
RDS(on)
ID = 100A, VGS = 20V
ID = 100A, VGS = 20V, Tj = 175°C
Gate to Source Charge
Qgs
VDD = 800V, ID = 100A
Gate to Drain Charge
Qgd
VDD = 800V, ID = 100A
Total Gate Charge
QG
VCC = 800V, IC = 100A, VGS = -5/20V
Body Diode Forward Voltage
VSD
IF = 50A, VGS = -5V
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0, VDS = 800V, f = 1MHz
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
VDD = 800V, ID = 100A,
Rise Time
tr
VGS = -2/20V,
Turn-off Delay Time
td(off)
RG = 6.8Ω
Fall Time
tf
Inductive Load
**Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage.
Preliminary
Min.
Typ.
Max. Units
1200
—
—
Volts
—
0.35
2.6
mA
—
0.40
4.0
mA
—
—
1.5
µA
1.5
2.5
5.0
Volts
1.0
1.7
5.0
Volts
—
15
25
mΩ
—
20
32
mΩ
—
140
—
nC
—
220
—
nC
—
500
—
nC
—
4.0
—
Volts
—
10.2
—
nF
—
1.0
—
nF
—
0.1
—
nF
—
17.2
—
ns
—
13.6
—
ns
—
62
—
ns
—
35.6
—
ns
2/7/14 Rev. 4
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