QJD1210010_14 Datasheet, PDF (4/7 Pages) Powerex Power Semiconductors – Split Dual SiC MOSFET Module 100 Amperes/1200 Volts

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QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Preliminary
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Diode Forward Voltage
Diode Capacitive Charge
VFM
QC
IF = 100A, VGS = -5V
IF = 100A, VGS = -5V, Tj = 175°C
VR = 1200V, IF = 100A, di/dt = 4000A/μs
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Contact Thermal Resistance
Internal Inductance
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-s)
Lint
Test Conditions
MOSFET Part
Diode Part
Per 1/2 Module, Thermal Grease Applied
MOSFET Part
Min.
Typ.
Max. Units
—
1.6
2.0
Volts
—
2.5
3.2
Volts
—
550
—
nC
Min.
Typ.
Max. Units
—
—
0.138 °C/W
—
—
0.243 °C/W
—
0.04
—
°C/W
—
10
—
nH
4
2/7/14 Rev. 4