QJD1210010_14 Datasheet, PDF (2/7 Pages) Powerex Power Semiconductors – Split Dual SiC MOSFET Module 100 Amperes/1200 Volts

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QJD1210010
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Drain-Source Voltage (G-S Short)
Gate-Source Voltage
Drain Current (Continuous) at TC = 150°C
Drain Current (Pulsed)*
Maximum Power Dissipation (TC = 25°C, Tj < 175°C)
Junction Temperature
Storage Temperature
Mounting Torque, M6 Mounting Screws
VDSS
VGSS
ID
ID(pulse)
PD
Tj
Tstg
—
Module Weight (Typical)
—
V Isolation Voltage
VRMS
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Preliminary
QJD1210010
1200
-5 / +25
100
250
1080
-40 to 175
-40 to 150
40
270
3000
Units
Volts
Volts
Amperes
Amperes
Watts
°C
°C
in-lb
Grams
Volts
2
2/7/14 Rev. 4