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| CM1400DUC-24NF Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DUC-24NF
Mega Power Dual IGBTMODâ¢
1400 Amperes/1200 Volts
GATE CHARGE, VGE
20
IC = 1400A
16
VCC = 400V
12
VCC = 600V
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE, QG, (nC)
REVERSE RECOVERY ENERGY VS.
FORWARD CURRENT
(TYPICAL)
103
VCC = 600V
VGE = ±15V
Tj = 125°C
RG = 0.22â¦
Inductive Load
102
101
102
103
EMITTER CURRENT, IE, (AMPERES)
104
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & CLAMP DIODE)
100 10-3
10-2
10-1
100
101
10-1
10-2
10-3
103
Single Pulse
TC = 25°C
Per Unit Base
Rth(j-c') =
0.014°C/W
(IGBT)
Rth(j-c') =
0.023°C/W
(Clamp)
10-5
10-4
TIME, (s)
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
10-3
102
101
10-1
VCC = 600V
VGE = ±15V
Tj = 125°C
IC
=
1400A
Eon
Eoff
Inductive Load
100
GATE RESISTANCE, RG, (â¦)
101
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
103
102
101
102
VCC = 600V
VGE = ±15V
Tj = 125°C
RG = 0.22â¦
Eon
Eoff
Inductive Load
103
104
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
103
102
101
10-1
VCC = 600V
VGE = ±15V
Tj = 125°C
IC = 1400A
Inductive Load
100
GATE RESISTANCE, RG, (â¦)
101
01/10 Rev. 0
5
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