CM1400DUC-24NF Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1400DUC-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Ratings
Symbol
CM1400DUC-24NF
Units
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current DC (T_C = 94°C)^*1
Peak Collector Current (Pulse, T_j ≤ 150°C)^*4
Emitter Current (T_C = 25°C)
Peak Emitter Current (Pulse)^*4
Maximum Collector Dissipation (T_j < 150°C, T_C = 25°C)^*1
Mounting Torque, M6 Mounting Screws
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E^*3
I_EM^*3
P_C
–
-40 to 150
-40 to 125
1200
±20
1400
2800
1400
2800
8900
40
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb (max.)
Mounting Torque, M6 Main Terminal Screw
–
40
in-lb (max.)
Weight (Typical)
–
1450
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
Volts
*1 Case temperatureT_C and heatsink temperature (T_f) measured point is just under the chips.
*3 I_E, I_EM, V_EC, I_FSM, I²t, t_rr, Q_rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
2
01/10 Rev. 0