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CM1400DUC-24NF Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM1400DUC-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
Gate-Emitter Threshold Voltage
VGE(th)
IC = 140mA, VCE = 10V
6
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
Collector-Emitter Saturation Voltage (Chip) VCE(sat)
IC = 1400A, VGE = 15V, Tj = 25°C*6
–
(Without Lead Resistance)
IC = 1400A, VGE = 15V, Tj = 125°C*6
–
Module Lead Resistance
R(lead)
IC = 1400A, Terminal-Chip
–
Input Capacitance
Cies
–
Output Capacitance
Coes
VCE = 10V, VGE = 0V
–
Reverse Transfer Capacitance
Cres
–
Total Gate Charge
QG
VCC = 600V, IC = 1400A, VGE = 15V
–
Inductive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 1400A,
–
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
–
Switch
Turn-off Delay Time
td(off)
RG = 0.22Ω, Inductive Load
–
Times
Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Emitter-Collector Voltage (Chip)
tf
trr*3
Qrr*3
VEC*3
Switching Operation
–
IE = 1400A
–
–
IE = 1400A, VGE = 0V*6
–
(Without Lead resistance)
–
7
–
1.8
2.0
0.286
–
–
–
7200
–
–
–
–
–
90
–
1
8
1.5
2.5
–
–
220
25
4.7
–
800
300
1000
300
700
–
3.2
mA
Volts
µA
Volts
Volts
mΩ
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
Volts
External Gate Resistance
RG
0.22
–
2.2
Ω
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case*1
Thermal Resistance, Junction to Case*1
Contact Thermal Resistance*1
Rth(j-c)Q
Per IGBT (1/2 Module)
–
Rth(j-c)D
Per Clamp Diode (1/2 Module)
–
Rth(c-f)
Thermal Grease Applied (1/2 Module)
–
–
–
0.012
0.014
0.023
–
°C/W
°C/W
°C/W
*1 Case temperatureTC and heatsink temperature (Tf) measured point is just under the chips.
*3 IE, IEM, VEC, IFSM, I2t, trr, Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible teperature rise.
01/10 Rev. 0
3
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