CM1400DUC-24NF Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1400DUC-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts
3000
2500
2000
OUTPUT CHARACTERISTICS
(TYPICAL)
V_GE = 20V
T_j = 25°C
15
13
12
1500
11
1000
10
500
89
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
6
I_C = 1400A
4
I_C = 560A
2
I_C = 2800A
0
0
10⁴
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
3000
2500
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 10V
T_j = 25°C
T_j = 125°C
1500
1000
500
0
0
10⁴
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
T_j = 125°C
10²
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
10³
t_d(off)
t_d(on)
10²
10¹
10²
t_f
t_r
V_CC = 600V
V_GE = ±15V
R_G = 0.22Ω
T_j = 125°C
Inductive Load
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
10³
10²
10¹
10^-1
t_d(off)
t_d(on)
t_r
t_f
V_CC = 600V
V_GE = ±15V
I_C = 1400A
T_j = 125°C
Inductive Load
10⁰
GATE RESISTANCE, R_G, (Ω)
10¹
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 500 1000 1500 2000 2500 3000
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
V_GE = 0V
C_ies
10²
C_oes
10¹
C_res
10⁰
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10⁴
10⁴
V_CC = 600V
V_GE = ±15V
R_G = 0.22Ω
T_j = 125°C
Inductive Load
10³
10³
I_rr
t_rr
10²
10²
10³
EMITTER CURRENT, I_E, (AMPERES)
10²
10⁴
4
01/10 Rev. 0