CM1000DUC-34NF Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & CLAMP DIODE)
10^{0 10-3}
10^-2
10^-1
10⁰
10¹
10^-1
10^-2
10^-3
10⁴
Single Pulse
T_C = 25°C
Per Unit Base
R_th(j-c') =
0.014°C/W
(IGBT)
R_th(j-c') =
0.023°C/W
(Clamp)
10^-5
10^-4
TIME, (s)
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
10^-3
10³
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10³
10²
10¹
10²
V_CC = 1000V
V_GE = ±15V
T_j = 125°C
R_G = 0.47Ω
E_on
E_off
Inductive Load
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
10⁴
V_CC = 1000V
V_GE = ±15V
T_j = 125°C
I_C = 1000A
10^{3 Inductive Load}
REVERSE RECOVERY ENERGY VS.
FORWARD CURRENT
(TYPICAL)
10³
V_CC = 1000V
V_GE = ±15V
T_j = 125°C
R_G = 0.47Ω
Inductive Load
10²
10¹
10²
10³
EMITTER CURRENT, I_E, (AMPERES)
10⁴
10²
10¹
10^-1
V_CC = 1000V
V_GE = ±15V
T_j = 125°C
I_C
=
1000A
E_on
E_off
Inductive Load
10⁰
GATE RESISTANCE, R_G, (Ω)
10¹
10²
10¹
10^-1
10⁰
GATE RESISTANCE, R_G, (Ω)
10¹
07/11 Rev. 2
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