CM1000DUC-34NF Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current DC (T_C = 104°C)^*2
Peak Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current, FWDi (T_C = 25°C)^*2,*4
Peak Emitter Current, FWDi (Pulse, Repetitive)^*3
Main terminals Mounting Torque, M6 Screw
T_j
T_stg^*7
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
–
Mounting to Heatsink Mounting Torque, M6 Screw
–
Weight (Typical)
–
Flatness to Baseplate (On Centerline X, Y1, Y2)^*8
e_c
Isolation Voltage (Main Terminal to Baseplate, RMS, f = 60Hz,AC 1 min.)
V_iso
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) measured point is just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
*4 Junction temperature (T_j) should not increase beyond maximum junction temperature (T_j(max)) rating.
*7 The operation temperature is restrained by the permission temperature of female connector housing.
*8 Baseplate flatness measurement point is as in the following figure.
39 mm
39 mm
CM1000DUC-34NF
-40 to 150
-40 to 125
1700
±20
1000
2000
8925
1000
2000
40
40
1450
-50 to 100
3500
BOTTOM
LABEL SIDE
BOTTOM
Y1
Y2
X
BOTTOM
– CONCAVE
+ CONVEX
Units
°C
°C
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
in-lb (max.)
in-lb (max.)
Grams
µm
Volts
2
07/11 Rev. 2