CM1000DUC-34NF Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
–
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
–
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 100mA, V_CE = 10V
6
Collector-Emitter Saturation Voltage (Chip) V_CE(sat)
I_C = 1000A, V_GE = 15V, T_j = 25°C^*5
–
(Without Lead Resistance)
I_C = 1000A, V_GE = 15V, T_j = 125°C^*5
–
Input Capacitance
C_ies
–
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
–
Reverse Transfer Capacitance
C_res
–
Total Gate Charge
Q_G
V_CC = 1000V, I_C = 1000A, V_GE = 15V –
Inductive
Turn-on Delay Time
t_d(on)
V_CC = 1000V, I_C = 1000A,
–
Load
Rise Time
t_r
V_GE1 = V_GE2 = 15V,
–
Switch
Turn-off Delay Time
t_d(off)
R_G = 0.47Ω, Inductive Load
–
Times
Fall Time
Emitter-Collector Voltage (Chip)
t_f
V_EC^*1
Switching Operation
–
I_E = 1000A, V_GE = 0V^*5
–
(Without Lead resistance)
Reverse Recovery Time
Reverse Recovery Charge
t_rr^*1
Q_rr^*1
V_CC = 1000V, I_E = 1000A, V_GE = ±15V, –
R_G = 0.47Ω, Inductive Load
–
Turn-on Switching Energy Per Pulse
E_on
V_CC = 1000V, I_C = I_E = 1000A,
–
Turn-off Switching Energy Per Pulse
E_off
V_GE = 15V, R_G = 0.47Ω,
–
Reverse Recovery Energy Per Pulse
E_rr^*1
T_j = 125°C, Inductive Load
–
Internal Lead Resistance
R_(lead)
Main Terminals-Chip, Per Switch,
–
T_j = 25°C^*2
Internal Gate Resistance
r_g
Per Switch
–
Typ.
–
–
7
2.2
2.45
–
–
–
6000
–
–
–
–
2.3
Max.
1
5
8
2.85
–
220
25
4.7
–
600
200
1000
300
3
–
500
90
–
272.4
–
250.2
–
172.4
–
0.286 –
0.67
–
Units
mA
µA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case^*2
R_th(j-c)Q
Per IGBT
–
Thermal Resistance, Junction to Case^*2
R_th(j-c)D
Per Clamp Diode
–
Contact Thermal Resistance,
Case to Heatsink^*2
R_th(c-f)
Per 1/2 Module
–
Thermal Grease Applied^*6
Typ.
–
–
0.012
Max.
0.014
0.023
–
Units
°C/W
°C/W
°C/W
Recommended Operating Conditions, T_a = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
DC Supply Voltage R_th(j-c)Q
V_CC
Applied Across C1-E2
Gate (-Emitter Drive) Voltage
V_GE(on)
Applied Across G1-Es1/G2-Es2
External Gate Resistance
R_G
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) measured point is just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
Min.
–
13.5
0.47
Typ.
1000
15.0
–
Max.
1100
16.5
4.7
Units
Volts
Volts
Ω
07/11 Rev. 2
3