CM1000DUC-34NF Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
2000
1600
1200
800
OUTPUT CHARACTERISTICS
(TYPICAL)
V_GE = 20V T_j = 25°C
15
13
12
11
400
10
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
T_j = 25°C
T_j = 125°C
10³
10²
0.5 1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
10³
t_d(on)
t_d(off)
t_f
10²
10¹
10^-1
t_r
V_CC = 1000V
V_GE = ±15V
I_C = 1000A
T_j = 125°C
Inductive Load
10⁰
10¹
EXTERNAL GATE RESISTANCE, R_G, (Ω)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
V_GE = 15V
T_j = 25°C
3
T_j = 125°C
2
1
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 1000A
6
I_C = 400A
4
I_C = 2000A
2
0
0 400 800 1200 1600 2000
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
V_GE = 0V
C_ies
10²
10¹
C_oes
C_res
10⁰
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10⁴
10⁴
V_CC = 1000V
V_GE = ±15V
R_G = 0.47Ω
T_j = 25°C
Inductive Load
10³
10³
I_rr
0
6
10⁴
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_d(off)
10²
10¹
10²
t_d(on)
t_f
t_r
V_CC = 1000V
V_GE = ±15V
R_G = 0.47Ω
T_j = 125°C
Inductive Load
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
GATE CHARGE, VGE
20
I_C = 1000A
T_j = 25°C
16
V_CC = 800V
V_CC = 1000V
12
8
t_rr
10²
10²
10³
EMITTER CURRENT, I_E, (AMPERES)
10²
10⁴
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE, Q_G, (nC)
4
07/11 Rev. 2