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| CM100DUS-12F Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DUS-12F
Trench Gate Design Dual IGBTMODâ¢
100 Amperes/600 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 300V
VGE = 15V
td(off)
RG = 6.3 â¦
Tj = 125°C
102
tf
td(on)
101
tr
100
100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
101
100
10-1
101
VCC = 300V
VGE = 15V
RG = 6.2 â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
102
EMITTER CURRENT, IE, (AMPERES)
103
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25C
100 Per Unit Base = Rth(j-c) = 0.7°C/W
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
102
VCC = 300V
VGE = 15V
RG = 6.3 â¦
trr
Tj = 125°C
trr
Irr
Irr
101
101
GATE CHARGE, VGE
20
IC = 100A
16
12
VCC = 200V
VCC = 300V
8
100
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
101
VCC = 300V
VGE = 15V
IC = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
100
4
0
0 100 200 300 400 500 600 700 800 900
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25C
100 Per Unit Base = Rth(j-c) = 0.35°C/W
10-1
10-1
10-2
10-2
10-1
100
101
102
GATE RESISTANCE, RG, ()
10-3
10-5
TIME, (s)
10-4
10-3
10-3
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
4
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