CM100DUS-12F Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM100DUS-12F
Trench Gate Design Dual IGBTMOD™
100 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Ratings
Symbol
CM100DUS-12F
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C, T_j ≤ 150°C)
Mounting Torque, M5 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
350
31
Mounting Torque, M6 Mounting
–
40
Weight
–
310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
I_CES
V_CE = V_CES, V_GE = 0V
–
–
1
mA
I_GES
V_GE = V_GES, V_CE = 0V
–
–
20
μA
V_GE(th)
I_C = 10mA, V_CE = 10V
5
6
7
Volts
V_CE(sat)
I_C = 100A, V_GE = 15V, T_j = 25°C
1.7
2.0
2.7
Volts
I_C = 100A, V_GE = 15V, T_j = 125°C
–
1.95 –
Volts
Q_G
V_CC = 300V, I_C = 100A, V_GE = 15V
–
620
–
nC
Emitter-Collector Voltage**
V_EC
I_E = 100A, V_GE = 0V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
–
–
2.6
Volts
Dynamic Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Resistive
Turn-on Delay Time
t_d(on)
V_CC = 300V, I_C = 100A,
Load
Rise Time
t_r
V_GE1 = V_GE2 = 15V,
Switch
Turn-off Delay Time
t_d(off)
R_G = 6.3Ω, Inductive
Times
Fall Time
t_f
Load Switching Operation
Diode Reverse Recovery Time**
t_rr
I_E = 100A
Diode Reverse Recovery Charge**
Q_rr
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
–
27
nf
–
–
1.8
nf
–
–
1
nf
–
–
100
ns
–
–
80
ns
–
–
300
ns
–
–
150
ns
–
–
150
ns
–
1.9
–
µC
2