CM100DUS-12F Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

CM100DUS-12F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Trench Gate Design
Dual IGBTMOD™
100 Amperes/600 Volts
N
W
B
P - NUTS x Z DEEP (3 PLACES)
TC MEASURED
POINT
A
D
Y
C2E1
E2
C1
Q (2 PLACES)
E
F
X
G
F
M
K
K
T
V
T
U
U
J
R
#110 TAB x H THICK
(4 PLACES)
S
C
L
G2
E2
RTC
C2E1
E2
C1
RTC
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A
3.70
94.0
B
1.89
48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15±0.01
80.0±0.25
E
0.43
11.0
F
0.16
4.0
G
0.71
18.0
H
0.02
0.5
J
0.53
13.5
K
0.91
23.0
L
0.83
21.2
M
0.67
17.0
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Z
Inches
0.28
M5
0.26 Dia.
0.02
0.30
0.63
0.10
1.0
0.94
0.51
0.47
0.47
Millimeters
7.0
M5
6.5 Dia.
4.0
7.5
16.0
2.5
25.0
24.0
13.0
12.0
12.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
£ Low V_CE(sat)
£ Low E_SW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DUS-12F is
a 600V (V_CES), 100 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
V_CES
Type
Amperes
Volts (x 50)
CM
100
12
1