CM100DUS-12F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM100DUS-12F
Trench Gate Design Dual IGBTMOD™
100 Amperes/600 Volts
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c')Q
Per IGBT 1/2 Module,
–
T_c Reference Point Under Chip
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
–
** If you use this value, Rth(f-a) should be measured just under the chips.
Typ.
Max. Units
0.35 °C/W
–
0.70 °C/W
0.23** –
°C/W
0.07 –
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
200
T_j = 25°C
11
13
15
160
V_GE = 20V
10
9.5
8.5
9
120
8
80
7.5
40
7
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
T_j = 25°C
4
3
I_C = 200A
I_C = 100A
2
I_C = 40A
1
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10¹
V_CC = 300V
V_GE = 15V
R_G = 6.3 Ω
T_j = 125C
HALF-BRIDGE
SWITCHING
10⁰
E_SW(on)
E_SW(off)
10^-1
10⁰
10¹
COLLECTOR-CURRENT, I_C, (AMPERES)
10²
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
V_GE = 15V
2.5
T_j = 25°C
T_j = 125°C
2.0
1.5
1.0
0.5
0
0 40 80 120 160 200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
V_CE
10²
V_GE = 0V
f = 1MHz
C_ies
10¹
10¹
10⁰
0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
10⁰
C_oes
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
3