UMA1021M Datasheet, PDF (9/16 Pages) NXP Semiconductors – Low-voltage frequency synthesizer for radio telephones

Philips Semiconductors
Low-voltage frequency synthesizer
for radio telephones
Product specification
UMA1021M
SYMBOL
PARAMETER
CONDITIONS
Charge pump outputs; pins 2 and 3; R_SET = 5.6 kΩ
I_ocp(err)
I_match
I_LIcp
charge pump output current error
sink-to-source current matching
charge pump off leakage current
V_CP/CPF = ¹â„₂V_CC
V_CP/CPF
charge pump voltage compliance
Phase noise
N₉₀₀
N_{1 800}
synthesizer’s contribution to
close-in phase noise of 900 MHz
RF signal at 1 kHz offset (GSM)
synthesizer’s contribution to
close-in phase noise of 1.8 GHz
RF signal at 1 kHz offset
(DCS1 800)
f_xtal = 13 MHz;
V_xtal = 0 dBm;
f_PC = 200 kHz
f_xtal = 13 MHz;
V_xtal = 0 dBm;
f_PC = 200 kHz
Interface logic input signal levels; pins 8, 9, 11, 12 and 13
V_IH
HIGH level input voltage
V_IL
LOW level input voltage
I_bias
input bias current
C_i
input capacitance
Interface logic input signal levels; pin 1
logic 1 or logic 0
V_IH
HIGH level input voltage
V_IL
LOW level input voltage
I_bias
input bias current
logic 1 or logic 0
C_i
input capacitance
Lock detect output signal; pin 20; open-drain output
V_OL
LOW level output voltage
I_sink < 0.4 mA
t_OOL
phase error threshold for
out-of-lock detector
MIN. TYP. MAX. UNIT
−25
−
−
±5
−5
±1
0.4
−
+25
%
−
%
+5
nA
V_CC − 0.4 V
−
−88
−
dBc/Hz
−
−82
−
dBc/Hz
0.7V_DD −
−0.3 −
−5
−
−
2
0.7V_CC −
−0.3 −
−5
−
−
2
−
−
−
25
V_DD + 0.3 V
0.3V_DD V
+5
µA
−
pF
V_CC + 0.3 V
0.3V_CC V
+5
µA
−
pF
0.4
V
−
ns
1999 Jun 17
9