UMA1021M Datasheet, PDF (7/16 Pages) NXP Semiconductors – Low-voltage frequency synthesizer for radio telephones

Philips Semiconductors
Low-voltage frequency synthesizer
for radio telephones
Product specification
UMA1021M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_DD
V_CC
V_CC − V_DD
V_n
∆V_GND
P_tot
T_stg
T_amb
T_j(max)
digital supply voltage
charge-pump supply voltage
difference in voltage between V_CC and V_DD
voltage at pins 6, 8, 9 and 11 to 13
voltage at pins 1, 2, 3, 15, 16, 19 and 20
difference in voltage between any of GND(CP), V_SS1, V_SS2,
and V_SS3 (these pins should be connected together)
total power dissipation
storage temperature
operating ambient temperature
maximum junction temperature
MIN.
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−
−55
−30
−
MAX.
+5.5
+5.5
+5.5
V_DD + 0.3
V_CC + 0.3
+0.3
UNIT
V
V
V
V
V
V
150
mW
+125
°C
+85
°C
150
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices. This device meets class 2 ESD test
requirements [Human Body Model (HBM)], in accordance with “MIL STD 883C - method 3015”.
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
PARAMETER
thermal resistance from junction to ambient in free air
VALUE
120
UNIT
K/W
1999 Jun 17
7