UMA1018M Datasheet, PDF (9/20 Pages) NXP Semiconductors – Low-voltage dual frequency synthesizer for radio telephones

Philips Semiconductors
Low-voltage dual frequency
synthesizer for radio telephones
Product specification
UMA1018M
CHARACTERISTICS
V_DD1 = V_DD2 = 2.7 to 5.5 V; V_CC = 2.7 to 5.5 V; T_amb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
Supply; pins 4, 5 and 18
V_DD
digital supply voltage
V_DD1 = V_DD2
2.7
V_CC
analog supply voltage
V_CC ≥ V_DD
2.7
I_DD
principal synthesizer digital supply V_DD = 5.5 V
−
current
auxiliary synthesizer digital supply V_DD = 5.5 V
−
current
I_CC
I_CCPD,
I_DDPD
charge pumps and analog supply V_CC = 5.5 V;
−
current
R_ext = 12 kΩ
current in power-down mode per logic levels 0 V or V_DD −
supply
RF principal main divider input; pin 6
f_VCO
V_6(rms)
RF input frequency
AC-coupled input signal level
(RMS value)
Z_I
C_I
R_pm
f_PPCmax
input impedance (real part)
typical pin input capacitance
principal main divider ratio
maximum principal phase
comparator frequency
2.7 V < V_DD < 3.5 V
50
2.7 V < V_DD < 5.5 V
50
R_s = 50 Ω;
50
2.7 V < V_DD < 3.5 V;
0.5 < f_VCO < 1.25 GHz;
T_amb = −20 to +85°C
R_s = 50 Ω;
100
2.7 V < V_DD < 5.5 V;
0.5 < f_VCO < 1.1 GHz;
T_amb = −30 to +85°C
R_s = 50 Ω;
150
2.7 V < V_DD < 5.5 V;
50 < f_VCO < 500 MHz;
T_amb = −30 to +85°C
f_VCO = 1 GHz
−
indicative, not tested −
512
−
f_PPCmin
minimum principal phase
−
comparator frequency
−
−
6.5
2.7
1.2
12
−
−
−
−
−
1
2
−
2 000
10
MAX.
5.5
5.5
8.5
4.0
2.0
50
1 250
1 100
225
300
300
−
−
131 071
−
−
UNIT
V
V
mA
mA
mA
µA
MHz
MHz
mV
mV
mV
kΩ
pF
kHz
kHz
1995 Jun 27
9