UMA1015M Datasheet, PDF (9/24 Pages) NXP Semiconductors – Low-power dual frequency synthesizer for radio communications

Philips Semiconductors
Low-power dual frequency synthesizer
for radio communications
Product specification
UMA1015M
SYMBOL
PARAMETER
CONDITIONS
MIN.
RF main divider input; RFA and RFB
f_RF
V_RF(rms)
Z_I
RF input frequency
50
RF input signal voltage R_s = 50 Ω;
50
(RMS value; AC coupled) V_DD1 = V_DD2 = 2.6 to 3.5 V;
f_RF = 400 to 1100 MHz
R_s = 50 Ω;
100
V_DD1 = V_DD2 = 3.5 to 5.5 V;
f_RF = 400 to 1100 MHz
input impedance
(real part)
R_s = 50 Ω;
150
V_DD1 = V_DD2 = 2.6 to 5.5 V;
f_RF = 50 to 400 MHz
f_RF = 1 GHz;
−
indicative, not tested
C_I
input capacitance
indicative, not tested
−
R_pm
principle main divider ratio
512
Reference divider input; f_XTALIN
f_XTALIN
reference input frequency
3
from crystal
V_XTALIN(rms) sinusoidal input voltage
100
(RMS value)
Z_I
input impedance
f_XTALIN = 12.8 MHz;
−
(real part)
indicative, not tested
C_I
input capacitance
indicative, not tested
−
R_rd
reference divider ratio
8
Charge pump current setting resistor input; I_SET
V_SET
voltage output on I_SET
R_SET = 12 to 60 kΩ
−
Charge pump outputs; CPA and CPB
I_CP
charge pump sink or
R_SET = 15 kΩ;
1.4
source current
CRA/CRB = logic 1;
I_cp = I_SET × 24;
V_cp = 0.4 V to V_CC − 0.5 V
R_SET = 15 kΩ;
0.7
CRA/CRB = logic 0;
I_cp = I_SET × 12;
V_cp = 0.4 V to V_CC − 0.5 V
I_LI
charge pump off leakage V_cp = 0.5V_CC
−5
current
TYP.
−
−
−
−
300
1
−
−
−
10
1
−
1.2
1.9
0.96
−
MAX. UNIT
1 100
250
MHz
mV
250
mV
400
mV
−
Ω
−
pF
131 071
35
500
−
−
4 095
MHz
mV
kΩ
pF
−
V
2.4
mA
1.2
mA
+5
nA
1995 Jun 22
9