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UMA1015M Datasheet, PDF (7/24 Pages) NXP Semiconductors – Low-power dual frequency synthesizer for radio communications | |||
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Philips Semiconductors
Low-power dual frequency synthesizer
for radio communications
Product speciï¬cation
UMA1015M
Power-down modes
The device can be powered down either via pin HPD
(active LOW = power-down) or via the serial bus (bits
SPDA and SPDB, logic 0 = power-down). The
synthesizers are powered up when both hardware and
software Power-down signals are at logic 1. When only
one synthesizer is powered down, the functions common
to both will be maintained. When both synthesizers are
switched off, only the voltage doubler (if enabled) will
remain active drawing a reduced current. An internal
oscillator will drive the doubler in this situation. If both
synthesizers have been in a power-down condition, then
when one or both synthesizers are reactivated, the
reference and main dividers restart in such a way as to
avoid large random phase errors at the phase comparator.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDD1, VDD2
VCC
âVCC-DD
Vn
V3, 17
âVGND
Tstg
Tamb
PARAMETER
MIN.
DC range of digital power supply voltage with respect â0.3
to DGND
DC charge pump supply voltage with respect to AGND â0.3
difference in voltage between VCC and VDD1, VDD2
â0.3
DC voltage at pins 1, 2, 5, 6, 8 to 15, 19 and 20 with â0.3
respect to DGND
DC voltage at pins 3 and 17 with respect to AGND
â0.3
difference in voltage between AGND and DGND
â0.3
(these pins should be connected together)
storage temperature
â55
operating ambient temperature
â30
MAX.
+6.0
UNIT
V
+6.0
V
+6.0
V
VDD1 + 0.3 V
VCC + 0.3 V
+0.3
V
+125
°C
+85
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
1995 Jun 22
7
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