SI9925DY Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si9925DY
N-channel enhancement mode field-effect transistor
9. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
y
Z
8
c
5
E
A
X
H_E
vM A
pin 1 index
1
e
A₂
A₁
4
b_p
wM
Q
(A ₃)
A
θ
L_p
L
detail X
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
UNIT _max. A₁
A₂
A₃
b_p
c
D⁽¹⁾ E⁽²⁾
e
H_E
L
L_p
Q
v
w
y
Z ⁽¹⁾
θ
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25 0.25
0.1
0.7
0.3
8^o
inches
0.069
0.010
0.004
0.057
0.049
0.01
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.050
0.244
0.228
0.041
0.039
0.016
0.028
0.024
0.01
0.01
0.004
0.028
0.012
0^o
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT96-1
IEC
076E03
REFERENCES
JEDEC
EIAJ
MS-012
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
Fig 14. SOT96-1 (SO8).
9397 750 08415
Product data
Rev. 01 — 20 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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