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SI9925DY Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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Philips Semiconductors
Si9925DY
N-channel enhancement mode ï¬eld-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
â
ID
drain current (DC)
Tamb = 25 °C; pulsed; tp ⤠10 s
â
Ptot
total power dissipation
Tamb = 25 °C; pulsed; tp ⤠10 s
â
Tj
junction temperature
â
RDSon drain-source on-state resistance VGS = 7.2 V; ID = 5 A
38
VGS = 4.5 V; ID = 5 A
41
VGS = 3 V; ID = 3.9 A
50
VGS = 2.5 V; ID = 1 A
62
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tj = 25 to 150 °C
â
â
Tamb = 25 °C; pulsed; tp ⤠10 s; Figure 2 and 3 â
Tamb = 70 °C; pulsed; tp ⤠10 s; Figure 2
â
Tamb = 25 °C; pulsed; tp ⤠10 µs; Figure 3
â
Tamb = 25 °C; pulsed; tp ⤠10 s; Figure 1
â
Tamb = 70 °C; pulsed; tp ⤠10 s; Figure 1
â
â55
â55
IS
source (diode forward) current (DC) Tamb = 25 °C
â
Max Unit
20
V
5
A
2
W
150
°C
45
mâ¦
50
mâ¦
60
mâ¦
80
mâ¦
Max Unit
20
V
±12
V
5
A
4
A
48
A
2
W
1.3
W
+150 °C
+150 °C
1.3
A
9397 750 08415
Product data
Rev. 01 â 20 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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