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| SI9925DY Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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Philips Semiconductors
Si9925DY
N-channel enhancement mode ï¬eld-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed
Symbol Parameter
Conditions
Static characteristics
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VDS = VGS; Figure 9
VDS = 16 V; VGS = 0 V; Tj = 25 °C
VDS = 10 V; VGS = 0 V; Tj = 70 °C
VGS = ±12 V; VDS = 0 V
VGS = 10 V; ID = 10 A; Figure 7 and 8
VGS = 4.5 V; ID = 5 A; Figure 7 and 8
VGS = 3 V; ID = 3.9 A; Figure 7 and 8
VGS = 2.5 V; ID = 1 A; Figure 7 and 8
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain (reverse) diode
VDS = 15 V; ID = 10 A
ID = 5 A; VDS = 6 V; VGS = 4.5 V; Figure 13
VDD = 6 V; RD = 6 â¦; VGS = 10 V; RG = 6 â¦
VSD
source-drain (diode forward) voltage IS = 2.3A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 5 A; dIS/dt = â100 A/µs; VGS = 0 V
Min Typ Max Unit
0.8 â
ââ
ââ
ââ
25 38
â 41
â 50
â 62
âV
1 µA
5 µA
100 nA
45 mâ¦
50 mâ¦
60 mâ¦
80 mâ¦
â 14 â S
â 9 20 nC
â 2 â nC
â 2.6 â nC
â 14 40 ns
â 13 30 ns
â 35 60 ns
â 9 30 ns
â 0.81 1.2 V
â 60 150 ns
9397 750 08415
Product data
Rev. 01 â 20 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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