SI9925DY Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si9925DY
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
R_th(j-a) thermal resistance from junction to ambient
Conditions
mounted on a printed circuit board;
minimum footprint; Figure 4
7.1 Transient thermal impedance
Value Unit
62.5 K/W
102
Z_th(j-amb) ^{δ = 0.5}
(K/W)
0.2
0.1
10 0.05
0.02
03af75
1
single pulse
10-1
10-4
10-3
10-2
10-1
P
δ
=
tp
T
tp
t
T
1
10
t_p (s)
T_amb = 25 °C
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
9397 750 08415
Product data
Rev. 01 — 20 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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