SA600 Datasheet, PDF (9/17 Pages) NXP Semiconductors – 1GHz LNA and mixer

Philips Semiconductors
1GHz LNA and mixer
Product specification
NE/SA600
MIXER OVERLOAD/DISTORTION CHARACTERISTICS 4.5 ≤ V_CC = V_CCMX ≤ 5.5V, Test Fig. 1, unless otherwise specified
Mixer Input 1dB Gain Compression Point vs LO Power
0
TEST FIGURE 2
–1
Mixer Input 1dB Gain Compression Point vs Temperature
0
TEST FIGURE 2
–1
–2
–2
–3
–3
–4
–4
–5
–5
–6
–6
–7
–8
Frf = 900MHz
–9
Plo = 1GHz
Fif = 100MHz
–10
–10 –8 –6 –4 –2
0
2
4
6
LO POWER (dBm)
Mixer Input Third-Order Intercept Point vs LO Power
10
–7
Frf = 900MHz
–8
Flo = 1GHz
Fif = 100MHz
–9
Plo = 0dBm
–10
–40 –20
0
20
40
60
TEMPERATURE (°C)
80 100
Mixer Input Third-Order Intercept Point vs IF Frequency
10
9
9
8
8
7
7
6
6
5
5
4
4
3
3
Frf1 = 900MHz
2
Frf2 = 901MHz
2
Frf1 = 900MHz
Flo = 1GHz
Frf2 = 901MHz
1
Fif = 100MHz
1
Flo > Frf
0
–10 –8 –6 –4 –2
0
2
4
6
LO POWER (dBm)
Mixer Input Third-Order Intercept Point vs RF Frequency
10
0
50
75
100
125
150
175 200
IF FREQUENCY (MHz)
Mixer Input Third-Order Intercept Point vs Temperature
10
9
9
8
8
7
7
6
6
5
5
4
4
3
2
1
0
800
Frf1 = X00MHz
Frf2 = X01MHz
X = 8, 9, 10, 11, 12
Flo > Frf
Fif = 100MHz
900
1000
1100
FREQUENCY (MHz)
1200
3
2
1
0
–40 –20
Frf1 = 900MHz
Frf2 = 901MHz
Flo = 1GHz
Plo = 0dBm
Fif = 100MHz
0
20
40
60
TEMPERATURE (°C)
Figure 8. Mixer Overload/Distortion Characteristics
80 100
SR00089
1993 Dec 15
55