SA600 Datasheet, PDF (7/17 Pages) NXP Semiconductors – 1GHz LNA and mixer

Philips Semiconductors
1GHz LNA and mixer
Product specification
NE/SA600
LNA OVERLOAD/NOISE/DISTORTION CHARACTERISTICS
4.5V ≤ V_CC = V_CCMX ≤ 5.5V, Test Fig. 1, unless otherwise specified.
LNA Input 1dB Gain Compression Point vs Frequency
0
LNA Input 1dB Gain Compression Point vs Temperature
0
–5
–5
–10
–10
–15
–15
–20
–20
–25
–25
–30
800
900
1000
1100
1200
FREQUENCY (MHz)
LNA 50Ω Noise Figure vs Frequency
3
–30
–40 –20
0
20
40
60
TEMPERATURE (°C)
80 100
LNA 50Ω Noise Figure vs Temperature
3
2.5
2.5
2
2
1.5
1.5
1
1
F = 900MHz
0.5
0.5
0
800
900
1000
1100
1200
FREQUENCY (MHz)
LNA Input Third-Order Intercept vs Frequency
0
TEST FIGURE 2
–2
0
–40 –20
0
20
40
60
80 100
TEMPERATURE (°C)
LNA Input Third-Order Intercept vs Temperature
0
TEST FIGURE 2
–2
–4
–4
–6
–6
–8
–8
–10
–10
–12
–12
–14
–14
F2 = F1 + 100kHz
–16
–16
–18
–18
F1 = 900MHz
F2 = 900.1MHz
–20
800
900
1000
1100
FREQUENCY (MHz)
1200
–20
–40 –20
0
20
40
60
TEMPERATURE (°C)
Figure 6. LNA Overload/Noise/Distortion Performance Characteristics
80 100
SR00087
1993 Dec 15
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