SA600 Datasheet, PDF (14/17 Pages) NXP Semiconductors – 1GHz LNA and mixer

Philips Semiconductors
1GHz LNA and mixer
Product specification
NE/SA600
16.5dB of gain with 2dB of noise figure. In this mode the current
consumption is increased to 13mA. But for hand-held equipment,
the average current consumption will be closer to 5-6mA. The other
advantage of the LNA through mode besides power savings is the
input overload characteristics. Due to the much higher input third
order intercept point of the LNA (+26dBm), the receiver is immune to
strong adjacent channel interference. Implementing this feature with
an FM/IF device such as the NE625/7 with fast RSSI response and
a window comparator toggling the LNA mode of NE/SA600, a fast
two-step AGC with response time less than 10µs can be achieved.
This is a very useful feature to equalize multipath fading effects in a
mobile radio system.
In conclusion, the NE/SA600 offers higher level of integration, higher
reliability, higher level of performance, ease of use, simpler system
design at a cost lower than the discrete multi-transistor
implementations. In addition, the NE/SA600 provides unique
features to enhance receiver performance which are almost
unattainable with discrete implementations.
RF
INPUT
900MHz
V_CC
C5
0.1µF
C1
L1
15nH
100pF
BYPASS
C3
10nF
1 _VC
C
2 GND_B
3 RF IN_A
4 _GNDA1
5 _BYPASS
6 GND_LO
V_CCMX ¹⁴
IF_OUT 13
GND_MX 12
RF IN_MX ¹¹
GND_A2 ¹⁰
RF OUT_A 9
C4
100pF
7 LO_IN
ENABLE 8
NE/SA600
LO INPUT
C6
10nF
L2
10µH
R2
C7
1kΩ _10nF
C2
4.7pF
L3 ^{IF OUT}
470nH
C8 MIXER IN
100pF
BANDPASS
IN FILTER OUT
S1
C9 ^{RF OUT}
100pF
R1
1kΩ
V_CC
Figure 12.
SR00093
1993 Dec 15
60