SA600 Datasheet, PDF (3/17 Pages) NXP Semiconductors – 1GHz LNA and mixer

Philips Semiconductors
1GHz LNA and mixer
Product specification
NE/SA600
AC ELECTRICAL CHARACTERISTICS^1,2
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
–3σ
TYP
+3σ
UNITS
LNA (V_CC = V_CCMX = +5V, T_A = 25°C; Enable = Hi, Test Figure 1, unless otherwise stated.)
S₂₁
S₂₁
∆S₂₁/∆T
∆S₂₁/∆T
∆S₂₁/∆f
S₁₂
S₁₁
S₂₂
P_-1dB
IP₃
NF
Amplifier gain
Amplifier gain in thru mode
Gain temperature sensitivity enabled
Gain temperature sensitivity in thru mode
Gain frequency variation
Amplifier reverse isolation
Amplifier input match³
Amplifier output match
Amplifier input 1dB gain compression
Amp input 3rd-order intercept
Amp input 3rd-order intercept (thru mode)
Amplifier noise figure
Amp noise figure w/shunt 15nH inductor
at input
900MHz
Enable = LO, 900MHz
900MHz
Enable = LO, 900MHz
800MHz - 1.2GHz
900MHz
900MHz
900MHz
900MHz
Test Fig. 2, 900MHz
Test Fig. 2, 900MHz, Enable = LO
900MHz
900MHz
14.9
–9.0
–47
–11
–16.8
–21.2
–11.6
1.9
1.7
16
-7.5
-0.008
-0.014
-0.014
-42
-10
-15
-20
-10
+26
2.2
2.0
17.1
–6.0
–37
–9
–13.2
–18.8
–8.6
2.5
2.3
dB
dB
dB/°C
dB/°C
dB/MHz
dB
dB
dB
dBm
dBm
dBm
dB
dB
t_ON
Amplifier turn-on time
Enable Lo → Hi
Coupling = 100pF
Coupling = 0.01µF
30
3
µs
ms
t_OFF
Amplifier turn-off time
Enable Hi → Lo
Coupling = 100pF
Coupling = 0.01µF
10
1
µs
ms
Mixer (V_CC = V_CCMX = +5V, T_A = 25°C, Enable = Hi, f_LO = 1GHz @ 0dBm, f_RF = 900MHz, f_IF = 100MHz, Test Fig. 1, unless otherwise stated)
VG_C
PG_C
S_11RF
NF_M
P_-1dB
IP_3INT
IP_2INT
G_RFM-IF
G_LO-IF
G_LO-RFM
S_11LO
G_LO-RF
G_RFO-RFM
Mixer voltage conversion gain
Mixer power conversion gain
Mixer input match
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
Mixer LO feedthrough
Local oscillator to mixer input feedthrough
LO input match
Local oscillator to RF input feedthrough
Filter feedthrough
R_L1 = R_L2 = 1kΩ
R_L1 = R_L2 = 1kΩ
900MHz
Test Fig. 3, 900MHz, f_IF = 80MHz
900MHz
900MHz
900MHz
900MHz, C_IF = 3pF
900MHz, C_IF = 3pF
900MHz
900MHz
900MHz
900MHz
9.5
–3.05
–23
12.2
–5.3
+5
+18
–24
10.4
–2.6
-20
14
-4
+6
+20
–7
-10
-33
–20
-46
-39
11.3
–2.15
–17
15.8
–2.7
+7
+22
–16
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
LNA + Mixer (V_CC=V_CCMX=+5V, T_A=25°C, Enable=Hi, f_LO=1GHz @ 0dBm, f_RF = 900MHz, f_IF = 100MHz, Test Fig. 1, unless otherwise
stated)
PG_C
NF
Overall power conversion gain
Overall noise figure
13.4
dB
3.5
dB
IP₃
Overall input 3rd-order intercept
–13
dBm
NOTE:
1. All meausrements include the effects of the NE/SA600 Evaluation Board (see Figure ) unless otherwise noted. Measurement system
impedance is 50Ω.
2. Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
3. With a shunt 15nH inductor at the input of the LNA, the value of S₁₁ is typically –15dB.
1993 Dec 15
49