SA1920 Datasheet, PDF (9/36 Pages) NXP Semiconductors – Dual-band RF front-end

Philips Semiconductors
Dual-band RF front-end
Product specification
SA1920
AC ELECTRICAL CHARACTERISTICS
High-Band, Single Mode of Operation
LNA and Image Reject Mixer
V_CC = +3.75 V, Freq_RF = 1960 MHz, Freq_LO = 2070.52 MHz, P_in = –3 dBm, T_A = +25_C; unless otherwise stated
PARAMETERS
MIN
–3s
TYP.
+3s
RF Input Frequency Range
1805
IF Frequency
100
110.52
LO Frequency
1905
Power Gain
21
23.5
Power Gain Reduction (Strong Signal Mode—LNA Off)
40
47
Noise Figure
4.0
4.2
4.4
Input Impedance, RF Port
50
Return Loss at Inputs
LO leakage at RF Port
–48
1 dB RF Input Compression Point
–24
IP3 (3^RD Order Intermodulation Product)
Referred to the RF Input Port
–15 –12.5 –10
(2 x LO) – (2 x RF) Spur Performance
–65
–50 dBm IN Referred to RF Input Port
Measure at LO = 2040 MHz and RF = 1985 MHz
MAX
1990
125
2115
25
54
–10
(3 x LO) – (3 x RF) Spur Performance.
–50 dBm IN Referred to RF Input Port.
Measure at LO = 2040 MHz and RF = 2003 MHz.
Image rejection, f_RX+2f_IF or f_RX –2f_IF
Referred to the RF Input Port
LO Input Power
Turn ON/OFF Time
–62.5
30
35
–5
–3
–1
30
UNITS
MHz
MHz
MHz
dB
dB
dB
W
dB
dBm
dBm
dBm
NOTES
1
dBc
dBc
dB
dBm
msec
High-Band LO Buffer
PARAMETERS
LO Frequency Range
Differential Output Power
Differential Output Impedance
Harmonic Content
Input Power
Input Impedance
Turn On/Off Time
MIN
–3s
TYP.
+3s MAX UNITS NOTES
1905
2115 MHz
–9
dBm
100
W
–20
dBc
–5
–3
–1
dBm
50
W
1
30
msec
1999 Mar 02
9