SA1920 Datasheet, PDF (8/36 Pages) NXP Semiconductors – Dual-band RF front-end

Philips Semiconductors
Dual-band RF front-end
Product specification
SA1920
AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation
V_CC = +3.75 V, Freq_RF = 881 MHz, Freq_LO = 991.52 MHz, P_in = –3 dBm, T_A = +25_C; unless otherwise stated
PARAMETERS
Min
–3s
TYP
+3s
System
RF Input Frequency Range
869
881
IF Frequency
110.52
LO Frequency
991.52
Cascaded Power Gain; includes 3dB filter loss
22.5
24
Power Gain Reduction (Strong Signal Mode—LNA Off)
29
35
Cascaded Noise Figure; includes 3dB filter loss
2.6
LNA
LNA Gain
17
17.5
18
LNA IIP3
–6
–5
–4
LNA Noise Figure
1.6
1.7
1.8
Mixer
Mixer Gain
9
9.5
10
Mixer IIP3
4
5
6
Mixer Noise Figure
9
10
11
Other
Input Impedance, RF Port
50
Return Loss at LNA Inputs and Output
Return Loss at Mixer Input and Outputs
LO leakage at RF Port
–42
LO Input Power
–5
–3
Turn ON/OFF Time
100
Max UNITS NOTES
960
MHz
MHz
MHz
25.5
dB
41
dB
dB
dB
dBm
dB
dB
dBm
dB
W
–10
dB
1
–10
dB
1
dBm
–1
dBm
msec
Low-Band LO Buffer
PARAMETERS
LO Frequency
Differential Output Power
Differential Output Impedance
Harmonic Content
Input Power
Input Impedance
Turn On/Off Time
Min
–3s
TYP.
+3s
Max UNITS NOTES
991.52
MHz
–7
dBm
100
W
–20
dBc
–5
–3
–1
dBm
50
W
1
30
msec
1999 Mar 02
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