SA1920 Datasheet, PDF (13/36 Pages) NXP Semiconductors – Dual-band RF front-end

Philips Semiconductors
Dual-band RF front-end
Product specification
SA1920
PERFORMANCE CHARACTERISTICS
V_CC = +3.75 V, Freq_RF = 1960 MHz, Freq_LO = 2070.52 MHz, P_in = –5 dBm, T_A = +25_C; unless otherwise stated
16.0
15.0
14.0
I_CC ^13.0
(mA) _12.0
11.0
10.0
9.0
+85°C
+25°C
–40°C
50.0
45.0
40.0
I_CC
(mA)
35.0
30.0
+85°C
+25°C
–40°C
8.0
3.60
3.65
3.70
3.75
3.80
3.85
3.90
V_CC (V)
SR01613
25.0
3.60
3.65
3.70
3.75
3.80
V_CC (V)
3.85
3.90
SR01614
Figure 5. Low Band Receive Normal I_CC
Figure 6. High Band Receive Normal I_CC
30
28
26
24
22
GAIN
(dB) ²⁰
18
16
14
12
10
100
105
110
115
120
125
IF FREQUENCY (MHz)
SR01610
Figure 7. High Band Gain vs. IF Frequency
45
40
35
30
25
20
100
105
110
115
120
125
IF FREQUENCY (MHz)
SR01609
Figure 8. High Band Image Rejection vs. IF Frequency
–10
–11
–12
IP3
(dBm)
–13
–14
–15
100
105
110
115
120
125
IF FREQUENCY (MHz)
SR01631
Figure 9. High Band IP3 vs. IF Frequency
20
18
16
IP2
(dBm)
14
12
10
100
105
110
115
120
125
IF FREQUENCY (MHz)
SR01611
Figure 10. High Band IP2 vs. IF Frequency
1999 Mar 02
13