SA1920 Datasheet, PDF (10/36 Pages) NXP Semiconductors – Dual-band RF front-end

Philips Semiconductors
Dual-band RF front-end
Frequency Doubler
PARAMETERS
Output Frequency Range
Output Power
Differential Output Impedance
Harmonic Content (3F, 4F, etc.)
Subharmonic Content (F_i)
Non-Harmonic Content
Turn On/Off Time
Phase Noise Degradation, ∆ f = 30kHz
Transmit Mixer
PARAMETERS
T_X Mixer Input Frequency
T_X RF Input Impedance, Balanced
T_X Mixer Output Frequency
T_X IF Load Impedance
Maximum T_X IF Load Capacitance
Conversion Power Gain
1 dB Input Compression Point
IIP2
IIP3
Noise Figure (double sideband)
Reverse Isolation T_XIN–LO_IN
Isolation LO_IN–T_XIN
NOTES:
1. External matching network is required.
2. From 200W input to a 1kW output.
Product specification
SA1920
MIN
–3s
TYP.
+3s MAX UNITS NOTES
1905
2115 MHz
–9
dBm
100
W
–20
dBc
–20
dBc
80
dBc
30
msec
6
dB
MIN
–3s
TYP.
+3s MAX UNITS NOTES
824
1910 MHz
200
W
70
200
MHz
1000
W
2
pF
15
16
17
dB
2
–17
dBm
20
dBm
–9
–7
–5
dBm
7.5
dB
40
dB
40
dB
1999 Mar 02
10