PSMN9R0-25YLC_1111 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN9R0-25YLC
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
50
R_DSon
(mΩ)
40
30
20
10
0
0
2.8
20
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V_GS(V) = 3.0
3.5
4.5
10
40
60
I_D (A)
2
a
1.5
1
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4.5V
V_GS= 10V
0.5
0
-60
0
60
120
180
T_j (°C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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10
V_GS
(V)
8
6
4
2
0
0
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20V
5V
V_DS= 12V
5
10
15
Q_G (nC)
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN9R0-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 November 2011
© NXP B.V. 2011. All rights reserved.
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