PSMN9R0-25YLC_1111 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN9R0-25YLC
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
60
g_fs
(S)
40
003aag201
60
I_D
(A)
40
003aag202
20
0
0
20
40
60
I_D (A)
20
0
0
T_j = 150 °C
T_j = 25 °C
1
2
3 _VGS(V) 4
Fig 8. Forward transconductance as a function of
drain current; typical values
10^-1
I_D
(A)
10^-2
003aag203
Min Typ Max
10^-3
10^-4
10^-5
10^-6
0
1
2
V_GS(V) ³
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
3
V_GS(th)
(V)
Max (1mA)
2
003aag204
I_D = 5mA
1mA
1 _{Min (5mA)}
0
-60
0
60
120 _{Tj (°C)} 180
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN9R0-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 November 2011
© NXP B.V. 2011. All rights reserved.
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