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| PSMN9R0-25YLC_1111 Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
PSMN9R0-25YLC
N-channel 25 V 9.1 m⦠logic level MOSFET in LFPAK using NextPower technology
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to drain
Simplified outline
mb
1234
SOT669 (LFPAK; Power-SO8)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN9R0-25YLC LFPAK; Power-SO8
4. Limiting values
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C ⤠Tj ⤠175 °C
25 °C ⤠Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp ⤠10 µs; Tmb = 25 °C;
see Figure 4
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 46 A;
Vsup ⤠25 V; unclamped; RGS = 50 â¦;
see Figure 3
Min Max Unit
-
25 V
-
25 V
-20 20 V
-
46 A
-
32 A
-
183 A
-
34 W
-55 175 °C
-55 175 °C
-
260 °C
140 -
V
-
31 A
-
183 A
-
10 mJ
PSMN9R0-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 1 November 2011
© NXP B.V. 2011. All rights reserved.
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