PSMN9R0-25YLC_1111 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN9R0-25YLC
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Table 6. Characteristics …continued
Symbol
Parameter
Q_oss
output charge
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
t_a
reverse recovery rise time
t_b
reverse recovery fall time
Conditions
V_GS = 0 V; V_DS = 12 V; f = 1 MHz
I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 15 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 12 V
V_GS = 0 V; I_S = 15 A;
dI_S/dt = -100 A/µs; V_DS = 12 V;
see Figure 18
Min Typ Max Unit
-
4
-
nC
-
0.86 1.1 V
-
20
-
ns
-
10.5 -
nC
-
11.4 -
ns
-
8.6 -
ns
60
10 4.5
I_D
(A)
40
V_GS(V) = 3.5
003aag199
3.0
2.8
20
2.6
2.4
2.2
0
0
1
2
3 _VDS(V) 4
25
R_DSon
(mΩ)
20
003aag200
15
10
5
0
0
4
8
12
16
V_GS (V)
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN9R0-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 November 2011
© NXP B.V. 2011. All rights reserved.
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