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PSMN069-100YS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET
NXP Semiconductors
PSMN069-100YS
N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET
200
RDSon
(mΩ)
VGS (V) = 4.5
4.7 4.8
150
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5
100
5.5
6
8
50
10
0
0
5
10
15
20
ID (A)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
8
6
4
2
VDS = 20 V
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50 V
80 V
104
C
(pF)
103
102
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Ciss
Coss
Crss
0
0
5
10
15
20
QG (nC)
10
10−1
1
10
102
VDS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN069-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 October 2010
© NXP B.V. 2010. All rights reserved.
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