PSMN069-100YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET

NXP Semiconductors
PSMN069-100YS
N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 5 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 10 A; dI_S/dt = 100 A/µs;
V_GS = 0 V; V_DS = 50 V
Min Typ Max Unit
-
0.8 1.2 V
-
45
-
ns
-
74
-
nC
30
g_fs
(S)
20
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10
0
0
10
20
30
40
I_D (A)
10
I_D
(A)
8
6
4
2
0
0
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T_j = 175 °C
2
T_j = 25 °C
4
6
V_GS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
1500
C
(pF)
1000
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C_iss
C_rss
500
0
0
5
10
15
V_GS (V)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
250
R_DSon
(mΩ)
200
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150
100
50
0
0
5
10
15
V_GS (V)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN069-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 October 2010
© NXP B.V. 2010. All rights reserved.
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