PSMN069-100YS Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET

PSMN069-100YS
N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET
Rev. 02 — 25 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 5 A;
T_j = 100 °C; see Figure 12
V_GS = 10 V; I_D = 5 A;
T_j = 25 °C; see Figure 13
Min Typ Max Unit
-
-
100 V
-
-
17 A
-
-
56 W
-55 -
175 °C
-
-
130 mΩ
-
56.6 72.4 mΩ