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PSMN069-100YS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET
NXP Semiconductors
PSMN069-100YS
N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET
30
ID
(A)
20
003aae154
10 8 6.5 6
5.5
5
4.8
10
4.7
VGS (V) = 4.5
0
0
1
2
3
VDS (V)
5
VGS(th)
(V)
4
3
2
1
0
-60
max
typ
min
003aae938
0
60
120 Tj (°C) 180
Fig 9. Output characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of drain-source voltage; typical values
junction temperature
10−1
ID
(A)
10−2
10−3
10−4
003aae487
min typ max
3.2
a
2.4
1.6
003aad774
0.8
10−5
10−6
0
2
4
6
VGS (V)
0
-60
0
60
120
180
Tj (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN069-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 October 2010
© NXP B.V. 2010. All rights reserved.
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