PSMN012-100YS_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 100V 12mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN012-100YS
N-channel 100V 12mΩ standard level MOSFET in LFPAK
45
RDSon
(mΩ)
30
VGS (V) = 4.5
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4.8
5.0
15
5.5
10.0
0
0
20
40
60 _{ID (A)} 80
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
8
6
4
2
20V
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80V
VDS = 50V
10⁴
C
(pF)
10³
10²
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Ciss
Coss
Crss
0
0
20
40
60
80
QG (nC)
10
10^-1
1
10
10²
VDS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN012-100YS_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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