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PSMN012-100YS_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel 100V 12mΩ standard level MOSFET in LFPAK
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NXP Semiconductors
PSMN012-100YS
N-channel 100V 12mΩ standard level MOSFET in LFPAK
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11
and 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
RG
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold
gate-source charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 45 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 15
ID = 45 A; VDS = 50 V; VGS = 10 V;
see Figure 14
QGS(th-pl) post-threshold
gate-source charge
QGD
gate-drain charge
ID = 45 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 15
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 14 and 15
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
Coss
output capacitance
see Figure 16
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 50 V; RL = 1.1 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
Min
90
100
0.95
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
-
-
-
-
-
-
3
4
-
4.6
-
100
0.06 5
10
100
10
100
-
23
27
35.8
10
12
0.7 -
51
-
64
-
14.9 -
10.2 -
4.7 -
19
-
4.4 -
3500 -
246 -
149 -
23
-
31
-
52.5 -
25
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
PSMN012-100YS_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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