PSMN012-100YS_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 100V 12mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN012-100YS
N-channel 100V 12mΩ standard level MOSFET in LFPAK
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min Typ Max Unit
Source-drain diode
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C; see Figure 17 -
0.8 1.2 V
t_rr
reverse recovery time I_S = 15 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 50 V
-
56
-
ns
-
129 -
nC
120
gfs
(S)
90
60
30
003aad849
6000
C
(pF)
4000
2000
003aad850
Ciss
Crss
0
0
25
50
75
100
ID (A)
0
0
3
6
9 _{VGS (V)} 12
Fig 5. Forward transconductance as a function of
drain current; typical values
40
RDSon
(mΩ)
31
003aad852
22
13
4
2
8
14
20
VGS (V)
Fig 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
120
ID
(A)
90
10.0
003aad847
5.5
5.0
60
30
0
0
4.8
4.5
VGS (V) = 4
1
2
VDS (V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN012-100YS_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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