PSMN012-100YS_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 100V 12mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN012-100YS
N-channel 100V 12mΩ standard level MOSFET in LFPAK
100
ID
(A)
75
50
25
0
0
003aad848
Tj = 175 °C
Tj = 25 °C
2
4
6
VGS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
3.2
a
2.4
1.6
003aad774
0.8
10^−5
10^−6
0
2
4
6
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN012-100YS_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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