BUK762R7-30B_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK762R7-30B
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
4
2
0
0
03nh10
V_DD = 14 V
V_DD = 24 V
25
50
75
100
Q_G (nC)
10000
C
(pF)
7500
5000
2500
0
10^−1
1
03nh16
C_iss
C_oss
C_rss
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
75
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03nh09
50
T_j = 175 °C
T_j = 25 °C
25
0
0
0.2
0.4
0.6
0.8
1.0
V_SD (V)
Fig 15. Source current as a function of source-drain voltage; typical values
BUK762R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 8 June 2010
© NXP B.V. 2010. All rights reserved.
9 of 14