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BUK762R7-30B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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BUK762R7-30B
N-channel TrenchMOS standard level FET
Rev. 04 â 8 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Dynamic characteristics
ID = 75 A; Vsup ⤠30 V;
RGS = 50 â¦; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 24 V; Tj = 25 °C;
see Figure 13
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
30 V
[1] -
-
75 A
-
-
300 W
-
2.3 2.7 mâ¦
-
-
2.3 J
-
29 -
nC
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