 English |
|
|
|
|
|
|
|
| BUK762R7-30B_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
| |||
| ◁ |
NXP Semiconductors
BUK762R7-30B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
ID = 25 A; VDS = 24 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
LS
internal source inductance
Source-drain diode
VDS = 30 V; RL = 1.2 â¦; VGS = 10 V;
RG(ext) = 10 â¦; Tj = 25 °C
from drain lead 6 mm from package to
center of die ; Tj = 25 °C
from upper edge of drain mounting
base to centre of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
VSD
source-drain voltage
IS = 40 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 20 V; Tj = 25 °C
Min Typ Max Unit
30 -
-
V
27 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
-
5.1 mâ¦
-
2.3 2.7 mâ¦
-
91
-
nC
-
19
-
nC
-
29 -
nC
-
4659 6212 pF
-
1691 2029 pF
-
622 852 pF
-
31
-
ns
-
107 -
ns
-
113 -
ns
-
118 -
ns
-
4.5 -
nH
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
88
-
ns
-
132 -
nC
BUK762R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 â 8 June 2010
© NXP B.V. 2010. All rights reserved.
6 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese